Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators
نویسندگان
چکیده
Abstract The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4 thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, beyond scenario of $\mathcal {PT}$-symmetry breaking experiment, we reveal a universal origin terms so-called hidden Berry curvature, as well material design principles. Hence, it gives rise zero curvature momentum space but nonzero layer-locked real space. We show that compared trivial insulator, is significantly enhanced antiferromagnetic topological insulators. Our picture provides paradigm for revealing physics result interplay between global and local symmetries, can be generalized various scenarios.
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ژورنال
عنوان ژورنال: National Science Review
سال: 2022
ISSN: ['2053-714X', '2095-5138']
DOI: https://doi.org/10.1093/nsr/nwac140